Structural Determination of the Si(111) square root of 3 times square root of 3-Bi Surface by X-ray Standing Waves and Scanning Tunneling Microscopy
Abstract
X-ray standing-wave measurements and tunneling microscopy have been combined to solve the atomic geometry of the (square root of 3) X (square root of 3R 30 degrees) honeycomb phase of Bi on Si(111). The standing-wave measurements utilize three different diffracting planes to triangulate the surface position of Bi atoms. The unoccupied surface sites required to completely determine the structure can be deduced from Rutherford-backscattering coverage and low-energy electron-diffraction symmetry arguments. These arguments are completely confirmed by a tunneling-microscope study, which is free of the ambiguities of previous studies. The final result is a (2/3-ML) (square root of 3) X (square root of 3R 30 degrees) structure with Bi atoms in the T1 sites directly above first-layer Si atoms.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 15, 1994
- Accession Number
- ADA638506
Entities
People
- Chien Liu
- G. E. Franklin
- I. Hwong
- J. A. Golovchenko
- J. C. Woicik
- J. R. Patel
- Michael Bedzyk
- R. E. Martinez
Organizations
- National Institute of Standards and Technology