Salient Trigger Parameters for Inducing Lock-On in Gallium Arsenide Photoconductive Semiconductor Switches
Abstract
To date, many of the investigations into lock-on mode Gallium Arsenide (GaAs) switching have centered on the use of the readily obtainable fundamental (1,064 nm) and second harmonic (532 nm) radiation from Nd:YAG laser systems. For the current work, a tunable (710- 910 nm) Titanium Sapphire (Ti:Sapphire) laser system was used to provide trigger energy at the largely unexplored wavelengths about the bandedge of GaAs (873 nm). The minimum trigger energy required to induce lockon was determined as a function of wavelength, beam intensity, and beam spot size. These parameters were measured for two switch lengths and two contact designs. Data will be presented which indicates that the minimum energy required to induce lock-on in GaAs PCSS devices is strongly dependent on all of the measured parameters.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1993
- Accession Number
- ADA638743
Entities
People
- J. P. Hull
- J. S. Choy
- M. C. Skipper
- M. D. Abdalla