RF Oscillations in Optically Activated Semi-Insulating GaAs
Abstract
It has been previously shown that semi-insulating GaAs can give rise to RF oscillations when the sample is optically activated[!]. The typical frequency range for the observed oscillation is several hundred megahertz. An intriguing feature of these oscillations is that the observed frequency far exceeds the frequency associated with Gunn effects, i.e., the transit time of the sample (typically 1 em long) was much longer than the observed RF period. Another important characteristic is that the oscillations persist during the lock-on of the current pulse, which can continue for hundreds of nanoseconds or even microseconds.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1989
- Accession Number
- ADA638770
Entities
People
- M. Weiner
- R. Pastore