Investigation of Optically Induced Avalanching in GaAs

Abstract

This paper discusses preliminary results of the investigation of optically induced avalanching in bulk GaAs switches. An experimental arrangement with sub-nanosecond resolution has been devised that can evaluate the avalanche phenomena as a function of time. This permits characterization of the temporal variation in the avalanche breakdown. The system arrangement, measurement techniques, and experimental data are presented.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1989
Accession Number
ADA639119

Entities

People

  • M. K. Browder
  • W. C. Nunnally

Organizations

  • University of Texas at Arlington

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Abstracts
  • Band Gaps
  • Bulk Materials
  • Electric Fields
  • Electron Holes
  • Energy
  • Experimental Data
  • Laser Diodes
  • Lasers
  • Light Sources
  • Materials
  • Measurement
  • Semiconductor Lasers
  • Semiconductors
  • Spark Gaps
  • Switches
  • Switching

Fields of Study

  • Physics

Readers

  • Optical Physics and Photonics.
  • Plasma Physics.