Photoconductive Semiconductor Switch (PCSS) Recovery
Abstract
Attempts to use photoconductive semiconductors as high-power (10-100 kV, 0.1-2 kA) toggling switches with recovery times of 5-I 00 ns have stimulated the exploration of their recovery mechanisms. We have observed that optically triggered GaAs switches exhibit "lock-on," i.e., when triggered. they do not recover as long as they are holding more than 4-8 kV/cm. Experiments are being performed to determine the minimum recovery time of these switches after lock-on, by immediately reducing their fields or currents. As an alternative to GaAs, Si is a semiconductor that does not exhibit lock-on. It has a very long recovery time (>/= 100 micro s) that can be shortened to less than 100 ns with highly concentrated gold doping (>10[expn 15]/cm[expn 3]). Device models that predict the behavior of PCSS and experiments on the recovery of GaAs and Au:Si switches are presented.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1989
- Accession Number
- ADA639129
Entities
People
- Bonnie Beth McKenzie
- F. J. Zutavern
- G. M. Loubriel
- H. P. Hjalmarson
- L. P. Schanwald
- R. A. Hamil
- W. M. O'malley
Organizations
- Sandia National Laboratories