A GaAs-AlGaAs Based Thyristor

Abstract

A study of bipolar junction thyristors based on GaAs and AlGaAs materials for pulsed power switching applications is reported. Novel aspects of the device and fabrication processes required by the design are discussed, and preliminary results of the GaAs homojunction thyristors are presented and analyzed.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1989
Accession Number
ADA639176

Entities

People

  • H. R. Fetterman
  • J. H. Hur
  • Martin A. Gundersen
  • P. Hadizad

Organizations

  • University of Southern California

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Band Gaps
  • California
  • Electrical Engineering
  • Electron Mobility
  • Energy Bands
  • Engineering
  • Epitaxial Growth
  • Fabrication
  • Laser Diodes
  • Lasers
  • Liquid Phase Epitaxy
  • Materials
  • Power
  • Pulsed Power
  • Switching
  • Thyristors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology