Characterization of 3000 Volt MOS Controlled Thyristors
Abstract
The MOS Controlled Thyristor (MCT) is a power thyristor which is turned on and off by a highly interdigitated surface array of MOSFET gates. The high-voltage diffusion-doped MCTs were developed by a three year contractual effort. These prototype MCTs have blocking voltages up to 3000 volts with a maximum controllable turn-off current density of 325 A/cm2 in a 1 cm2 active area die. A typical forward voltage drop is 2.5 V at 100 A with a 10/90% recovery time of 5 micro S. Characterization of these devices was undertaken and has shown: surge turn-on capability of 15.5 kA in a 16 micro S FWHM pulse; parallel operation of 3 devices at 300 A total current with less than 10% variation; and series operation. of 3 devices at 5 kV, 150 A.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1991
- Accession Number
- ADA639376
Entities
People
- C. Braun
- M. Weiner
- R. Pastore
- S. Schneider