Optimal Pulse-Modulator Design Criteria for Plasma Source Ion Implanters
Abstract
This paper describes what are believed to be the required characteristics of a high-voltage modulator for efficient and optimal ion deposition from the "Plasma Source Ion Implantation" (PSII) process. The PSII process is a method to chemically or physically alter and enhance surface properties of objects by placing them in a weakly ionized plasma and pulsing the object with a high negative voltage. The attracted ions implant themselves and form chemical bonds or are interstitially mixed with the base material. Present industrial uses of implanted objects tends to be for limited-production, high-value-added items. Traditional implanting hardware uses the typical low-current (mal semiconductor "raster scan" implanters. The targets must also be manipulated to maintain a surface normal to the ion beam. The PSII method can provide "bulk" equipment processing on a large industrial scale. For the first generation equipment, currents are scaled from milliamps to hundreds of amps, voltages to ~ 175kV, at kilohertz rep-rates, and high plasma ion densities.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1993
- Accession Number
- ADA640091
Entities
People
- William Reass
Organizations
- Los Alamos National Laboratory