Stabilization of Metal-Qxide Bulk Switching Devices with Diffused Bi Contacts

Abstract

Threshold switching from the high to low resistance state has been investigated in the polycrystalline and single crystal NbOx (where x = 2) metal-oxide devices. Stable and reproducible switching performance is observed in a configuration Bi-NbO2-Bi where Bi electrodes were covered with Au films. Improvement in the device performance is attributed to the Bi diffusion into NbOx which has been confirmed by the Auger electron spectroscopy.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1979
Accession Number
ADA640150

Entities

People

  • B. Lalevic
  • M. Gvishi
  • M. Shoga
  • S. Levy

Organizations

  • United States Army Communications-Electronics Command

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Auger Electron Spectroscopy
  • Auger Electrons
  • Crystals
  • Diffusion
  • Electrodes
  • Electron Spectroscopy
  • Electrons
  • Metal Oxides
  • Nanosecond Time
  • Oxides
  • Polycrystals
  • Pulsed Power
  • Repetition Rate
  • Resistance
  • Single Crystals
  • Spectroscopy
  • Switching

Fields of Study

  • Materials science

Readers

  • Solar Photovoltaics and Thermoelectric Devices.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene