Contact Effects on Silicon Surface Flashover Studies

Abstract

We studied the breakdown of n+nn+ silicon devices in vacuum and various dielectric fluids. The breakdown voltage exhibited a dependence on the abruptness of the high-low junction and on the dielectric constant of the surrounding dielectric liquid.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1989
Accession Number
ADA640238

Entities

People

  • Benjamin Senitzky
  • Robert Feuerstein

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Current Density
  • Dielectric Permittivity
  • Diffusion
  • Electric Fields
  • Electricity
  • Electromagnetic Fields
  • Electron Density
  • Electrons
  • Ionization
  • Mobility
  • Semiconductors
  • Space Charge
  • Transformers
  • Vacuum
  • Visible Spectra
  • Voltage

Fields of Study

  • Physics

Readers

  • Pulsed Power and Plasma Physics.
  • Semiconductor Device Technology