Switching of High-Power Current Pulses Up to 250kA and Submillisecond Duration Using New Silicon Devices- Reverse Switched Dinistors
Abstract
The switches based on silicon semiconductor devices - reverse switched dinistors are proposed to switch high-power pulsed currents of microsecond and submillisecond duration. The switch design is described for the operating voltage of up to 25kV and operating current of up to 200kA with the current pulses duration of 500 micro S at 0.1 l(sub max) We give the test results and estimate the possibility of using such a switch in the NIF capacitor bank.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1995
- Accession Number
- ADA640457
Entities
People
- D. Larson
- G. A. Kirillov
- G. N. Chumakov
- I. V. Galakhov
- S. N. Gudov
- V. A. Martynenko
- V. A. Osin
- V. I. Kovtun
- V. I. Zolotovki
- V. M. Murugov
Organizations
- Lawrence Livermore National Laboratory