Radiation and Thermally Hardened Switching Materials

Abstract

A method has been developed by which fast switching devices can be derived which have a high current carrying capability and are radiation hard. These devices are based on a junction between a conducting substrate and an oxide which can undergo a semiconductor-to-metallic transition. Example: NbO (metal)/NbO2 (semiconductor to metallic transiTiOn at 807 C) or TIO (metal)/ Ti3O5 (semiconductor to metallic transition at 135 C). VO/VO2 was also tried and it does work. However the off resistance is somewhat low and the device fragile because of the closeness to the actual transition temperature (approximately 65 C). It appears however that there are two distinct stages: one stage during which the junction behaves as Schottky diode, which is immediately followed by a stage of thermal runaway. More fundamental studies of this phenomena are certainly needed to fully exploit its potential.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1974
Accession Number
ADB000339

Entities

People

  • Paul M. Raccah

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  • Advanced Electronics
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Fields of Study

  • Physics

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  • Fluid Mechanics and Fluid Dynamics.
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Technology Areas

  • Microelectronics
  • Microelectronics - Graphene