Radiation Hardened Bipolar High Voltage Power Transistor.

Abstract

Results of an emitter comparison are given such that a decision can be made to determine if arsenic is more effective than phosphorus as an emitter dopant. Design considerations are also presented for a BV(CEO) approx. 100 V radiation hardened power transistor. Along with this is a discussion on the effects of gold on induced photocurrent, both in the lightly doped region and in the substrate. Pre- and post- irradiation electrical data are presented for representative wide and narrow base devices to show the advantages of the wide base design. (Author)

Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1974
Accession Number
ADB001456

Entities

People

  • Jack Saltich
  • Jerry Bledsoe

Organizations

  • Motorola Mobility

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Electromagnetic Fields
  • Electromagnetic Radiation
  • High Voltage
  • Phosphorus
  • Radiation
  • Substrates
  • Transistors
  • Voltage

Fields of Study

  • Physics

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design