Integrated Circuit Electromagnetic Susceptibility Investigation - Phase 2. MOS NAND Gate Study

Abstract

The increasing availability of CMOS devices vis a vis to military system designers presents the possibility of significant differences from bipolar devices RF susceptibility. This report documents a preliminary investigation into possible differences between functionally similar devices (the 7400 bipolar NAND gate and the 4011 CMOS NAND gate) at four frequencies: . 22, .91, 3.0, and 5.6 GHz. While it is difficult to compare the observed susceptibility modes, it appears that the CMOS 4011 device is slightly less susceptible than the bipolar 7400 device. The underlying susceptibility mechanism can be explained by rectification of the RF signal in parasitic and protective pn junctions as in the bipolar devices, but the circuit reaction to these rectified currents and voltages is different.

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Document Details

Document Type
Technical Report
Publication Date
Jul 26, 1974
Accession Number
ADB002276

Entities

People

  • C. E. Clous
  • J. M. Roe
  • J. R. Chott

Organizations

  • McDonnell Douglas

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Air Force Facilities
  • Circuit Analysis
  • Circuits
  • Data Analysis
  • Diagrams
  • Electronics Laboratories
  • Impedance
  • Integrated Circuits
  • Measurement
  • Nand Gates
  • New York
  • P-N Junctions
  • Power Supplies
  • Radio Frequency Power
  • Resistance
  • Test And Evaluation

Readers

  • Integrated Circuit Design and Technology.
  • Systems Analysis and Design