Integrated Circuit Electromagnetic Susceptibility Investigation - Phase 2. Bipolar NAND Gate Study

Abstract

The main thrust of Phase II of the Integrated Circuit Electromagnetic Susceptibility Investigation has been to develop a model of the effects that occur in bipolar integrated circuits. The broad category of bipolar devices was subdivided into digital and linear with a bipolar operational amplifier representing the linear subcategory reported on elsewhere. A 7400-2-input NAND gate was selected as a representative digital device for intensive study to develop the investigation techniques and to explore the basic physics of the RF interaction with the semiconductor device itself. This report documents the digital study and the results show wider ranging implications than for the bipolar NAND gates alone.

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Document Details

Document Type
Technical Report
Publication Date
Jul 26, 1974
Accession Number
ADB002279

Entities

Organizations

  • McDonnell Douglas

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Circuit Analysis
  • Circuits
  • Diagrams
  • Electromagnetic Susceptibility
  • Electronics Laboratories
  • Failure Mode And Effect Analysis
  • Impedance
  • Integrated Circuits
  • Nand Gates
  • P-N Junctions
  • Radio Frequency Power
  • Schematic Diagrams
  • Semiconductor Devices
  • Semiconductors
  • Test And Evaluation
  • Test Equipment

Readers

  • Battery Technology and Engineering
  • Microwave Engineering.
  • Solar Photovoltaics and Thermoelectric Devices.

Technology Areas

  • Microelectronics