Radiation and Thermally Hardened Switching Materials

Abstract

Over the past six months work was concentrated on the analysis of longevity factors of niobium dioxide devices, some of the difficulties recognized were: Oxidation of the NbO2 layer around the electrode contact and short, sputtering away of the W whisker's tip and wandering which makes for non- reproducibility of device characteristics. Potting of the assembly and use of an intermediate In dot seem to alleviate the problems. Further testing is in progress at Fort Monmouth. In addition two new device structures were developed: (1) For the regular devices using cheaper Nb metal sheets instead of NbO single crystal chips. (2) For long intense pulses using directly single crystal NbO2.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1975
Accession Number
ADB004711

Entities

People

  • Paul M. Raccah

Tags

Communities of Interest

  • Advanced Electronics
  • Space
  • Weapons Technologies

DTIC Thesaurus Topics

  • Acquisition
  • Air Force
  • Air Force Facilities
  • Artillery
  • Crystals
  • Electronics
  • Elements
  • Films
  • Materials
  • Military Research
  • New Jersey
  • New York
  • Radiation
  • Security
  • Single Crystals
  • Test And Evaluation
  • Warfare

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  • Economics
  • Powder metallurgy of Titanium alloys.
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