Radiation and Thermally Hardened Switching Materials

Abstract

The field switching properties of NbO2/NbO, NbO2/(reduced NbO2) and polycrystalline nonstoichiometric NBO2 have been investigated. Under an applied electric field they switch from a high (greater than 10,000 ohms) to a low (apporximately 10 ohms) resistance in times smaller than 0.7 ns. For pulse durations of several nsec, the current carrying capability is higher than 80 A. the switching mechanism appears to proceed in two stages which could be electrode limited Schottky barrier breakdown and bulk limited field lowering process of NbO2, then followed by a thermal runaway.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1976
Accession Number
ADB009131

Entities

People

  • Paul M. Raccah
  • Soo H. Shin

Tags

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  • Advanced Electronics
  • Energy and Power Technologies
  • Weapons Technologies

DTIC Thesaurus Topics

  • Artillery
  • Electric Fields
  • Electromagnetic Fields
  • Electron Microscopy
  • Electronics
  • Electronics Laboratories
  • Electrons
  • Energy
  • Low Temperature
  • Materials Processing
  • Military Research
  • Phase Transformations
  • Radiation
  • Square Roots
  • Test And Evaluation
  • Transport Properties
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  • Electrical Engineering
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