Study of Radiation Effects in Bulk CMOS Microcircuits, I2L/LSI Logic Cells and Optical Couplers

Abstract

Results are presented on the study of radiation effects in bulk CMOS microcircuits, basic logic cells of developmental integrated-injection-logic (I2L) LSI, and optical couplers. Radiation effects considered include the permanent damage effects resulting from neutron displacement damage and total ionizing radiation dose. Transient photoresponse has been measured as a function of ionizing radiation pulse width. CMOS latch-up was investigated as induced by electrical pulsed overstress and/or pulsed ionizing radiation exposure. No significant synergistic effects were observed.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1975
Accession Number
ADB011702

Entities

People

  • C. W. Perkins
  • J. E. Ashe
  • James P. Raymond
  • T. Y. Wong

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Circuits
  • Computer Programs
  • Digital Communications
  • Electronics
  • Electronics Industry
  • Electronics Laboratories
  • Failure Mode And Effect Analysis
  • Ionizing Radiation
  • Large Scale Integration
  • Optoisolators
  • Power Electronics
  • Radiation
  • Radiation Effects
  • Semiconductor Devices
  • Semiconductors
  • Test And Evaluation

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Pulsed Power and Plasma Physics.

Technology Areas

  • Microelectronics