Reliability Evaluation of Aluminum Implanted CMOS Microcircuits

Abstract

A reliability evaluation of Complementary Metal Oxide Semiconductor (CMOS) microcircuits which were made hard to total ionizing dose by means of ion implanting aluminum in the gate insulator was conducted. The testing revealed the existence of room temperature threshold voltage instabilities. Failure analysis isolated the cause to charge migration within the insulator. A complete description of the instability in relation to temperature and gate voltage is developed. Finally, a model for the CMOS behavior under temperature bias conditions as well as radiation response is proposed.

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1976
Accession Number
ADB011849

Entities

People

  • Jack S. Smith

Organizations

  • Rome Laboratory

Tags

DTIC Thesaurus Topics

  • Air Force
  • Boundary Value Problems
  • Circuits
  • Complementary Metal-Oxide Semiconductors
  • Electron Holes
  • Equations
  • Failure Analysis
  • Ionizing Radiation
  • Long Life
  • Metal Oxide Semiconductors
  • Radiation
  • Semiconductors
  • Shock
  • Standards
  • Stress Tests
  • Test And Evaluation
  • Thermal Shock

Fields of Study

  • Engineering
  • Physics

Readers

  • Cardiovascular Physiology
  • Integrated Circuit Design and Technology.
  • Thermal Physics or Thermal Science.

Technology Areas

  • Microelectronics