Development of High-Speed IV-VI Photodiodes

Abstract

The studies that are described were aimed at reduction of the capacitance of IV-VI semiconductor photodiodes, with particular emphasis upon 3- 5 micrometer devices that are suitable for lightweight thermal imaging systems. The starting point was the thin-film Pb barrier IV-VI photodiodes that were discovered and developed by Ford Research Staff.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1976
Accession Number
ADB013900

Entities

People

  • E. B. Schermer
  • H. Holloway
  • K. F. Yeung
  • M. D. Hurley

Organizations

  • Ford Motor Company

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Background Noise
  • Boundaries
  • Detectors
  • Dielectric Permittivity
  • Diodes
  • Electronics Laboratories
  • Films
  • Metal-Semiconductor Junctions
  • P-N Junctions
  • Quantum Efficiency
  • Schottky Diodes
  • Semiconductor Devices
  • Semiconductors
  • Test And Evaluation
  • Thermal Instability
  • Thermal Stability
  • Thin Films

Readers

  • Military Logistics and Supply Chain Management
  • Optical Physics and Photonics.
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Microelectronics