Development of Focal Plane Multiplexer
Abstract
A hybrid focal plane technology which makes use of optimum detector and singal processor materials has been developed and successfully applied to the fabrication of a PbSnTe-silicon module, utilizing high performance backside- illuminated PbSnTe photodiode arrays. The thermal expansion mismatch between the two materials is accommodated by flexible metallic interconnects. Functional focal plane modules with devices on 4 mil centers in a 32x32 format have been fabricated and tested to temperatures as low as 4.2 K with charge storage operation of individual PbSnTe devices on the mated array at temperatures as high as 30 K. Arbitrarily long frame times are achieved with the FET switch array multiplexer used as a signal processor for this program. The structures fabricated withstand repeated thermal cycling to 4.2 K from room temperature while maintaining a high percentage on interconnections intact. The techniques developed during this program are more generally applicable to the fabrication of hybrid focal planes utilizing a wide variety of detector materials and signal processor configurations. Since the PbSnTe-Si structure successfully fabricated represents the single most difficult mechanical problem because of the large thermal expansion mismatch, all other direct mated detector-processor structures are, by comparison, very straightforward.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1977
- Accession Number
- ADB018323
Entities
People
- John M. Tracy
- Joseph T. Longo