Gallium Phosphide Photodiode Development
Abstract
The specific objectives of this program were to fabricate, test and deliver five single-element (detector size 0.01 x 0.01 inch) gallium phosphide (GaP) photovoltaic detectors with performance design goals (for each element) of eta > 30% and NEP < or = 2.5 time 10 to the -14th power W/sq. root Hz at lambda = 0.4 micrometers. These detectors demonstrate the feasibility for the eventual use of GaP photodiodes in a synchronous orbit, strapdown star sensor. Additionally, photoconductive test samples were fabricated in order to evaluate the characteristics of copper-doped GaP crystals. The work effort under this contract resulted in the production, test and delivery of five high performance Mg(+) ion implanted GaP photovoltaic detectors.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1977
- Accession Number
- ADB019116
Entities
People
- A. M. Chiang
- R. Rotolante
Organizations
- Honeywell International, Inc.