Study of the Electronic Surface State of 3-5 Compounds

Abstract

Much time and effort has gone into carefully analyzing data from the last experimental runs. As a result, several papers have either been submitted or are in the process of being submitted for publication. Highlights include: (1) An analysis of our chemical shift data for the oxidation of GaAs (including GaSb and InP) in terms of a ligand shift analysis. This paper, which is in the final prepublication stage, also includes the determination of the escape depth of GaAs around the region of the escape depth minimum and a model for the oxidation of GaAs (110). (2) A correlation of valence band results showing the effects of strain and relating this to possible rearrangements of the surface lattice.

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Document Details

Document Type
Technical Report
Publication Date
Mar 15, 1977
Accession Number
ADB019171

Entities

People

  • William E. Spicer

Organizations

  • Stanford University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Chemistry
  • Electron Energy
  • Electronics Laboratories
  • Energy Bands
  • Ionization
  • Kinetic Energy
  • Linear Accelerators
  • Measurement
  • Particle Physics
  • Semiconductors
  • Spectra
  • Spectroscopy
  • Three Dimensional
  • Valence Bands
  • X Rays

Readers

  • Semiconductor Device Technology
  • Technical Research and Report Writing.

Technology Areas

  • Microelectronics