Theory and Operating Characteristics of TRAPATT Amplifiers

Abstract

This report describes the current state of understanding of the theory and operating characteristics of microwave avalanche diodes operating in the TRAPATT mode as both oscillators and amplifiers. Device operating principles, and their dependence upon material, impurity profile, structure, biasing and circuit loading, are described. Methods of device fabrication are discussed, and present state of the art is tabulated for oscillators and amplifiers on a power-frequency basis. Techniques developed for the design of TRAPATT amplifiers as a result of several programs sponsored by the U.S. Army Ballistic Missile Defense Advanced Technology Center are discussed, and experimental results (primarily at S-band) are presented.

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Document Details

Document Type
Technical Report
Publication Date
Jan 26, 1977
Accession Number
ADB020021

Entities

People

  • George I. Haddad
  • Martin I. Grace
  • Richard W. Laton

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Amplifiers
  • Avalanche Diodes
  • Ballistic Missiles
  • Bandwidth
  • Charge Carriers
  • Fabrication
  • Frequency
  • Frequency Bands
  • Materials
  • P-N Junction Diodes
  • P-N Junctions
  • Phased Array Radar
  • Repetition Rate
  • Semiconductor Devices
  • Semiconductors
  • Trapatt Diodes
  • Waveforms

Fields of Study

  • Physics

Readers

  • Microwave Engineering.
  • Nuclear Civil Defense.
  • Systems Analysis and Design