X-Band Power Field Effect Transistor.
Abstract
This report summarizes progress made during this 24-month program. The objective of this contract was to advance GaAs power FET technology to a level that permits fabrication of reliable devices capable of achieving high power and wide bandwidth operation at X-band frequencies. The program scope encompassed material, device, and circuit development. At the completion of the contract, FET single and multistage microstrip amplifiers and FET microstrip oscillators were delivered to AFAL. Device deliveries were made periodically throughout the contract. A number of significant achievements have been made under this contract. High quality epitaxial wafers with undoped buffer layers were prepared routinely using a two-bubbler system. The epitaxial growth system was scaled up in size to permit growth on slices of up to 5 cm diameter. At 8 GHz, an output power of 5.1 W has been achieved with 5 dB gain and 34.6% power-added efficiency. At 10 GHz, 3.9 W has been obtained with 6 dB gain. Single-stage microstrip amplifiers have delivered up to 4 W of output power at X-band with a 1 dB bandwidth well over 1 GHz and power-added efficiency well in excess of 20%. Multistage amplifiers have demonstrated high gain (> 30 dB) and high-power (4 to 5 W) at C- and X-bands. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1978
- Accession Number
- ADB034206
Entities
People
- F. H. Doerbeck
- H. M. Macksey
- H. Q. Tserng
- V. N. Sokolov
- W. R. Wisseman
Organizations
- Texas Instruments