K-Band Low Noise GaAs FET.
Abstract
The development of FET devices and circuits for operation at K-band is described. Electron beam lithography was used to fabricate 0.5 micrometer gates for FETs with channels on liquid phase epitaxy (LPE), vapor phase epitaxy (VPE), and ion implantation. LPE FETs exhibited the high gain required for K-band operation and were operated as amplifiers at 30 GHz, 35 GHz and 38 GHz. Maximum gains of more than 10 dB were achieved in each case. The best K-band noise figures measured were 6.9 dB with 5 dB gain at 30 GHz, and 10 dB, with 5 dB gain at 35 GHz. An FET oscillator was also developed using an ion implanted channel FET which was tuned from 28 GHz to 39 Ghz at about 1 mW of output power. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1979
- Accession Number
- ADB044073
Entities
People
- Gary W. Keithley
- Glenn O. Ladd Jr.
- H. B. Kim
- J. Schellenberg
- L. H. Hackett
Organizations
- Hughes Aircraft Company