Impurity Band Conduction Materials.
Abstract
Investigated are the properties of a large array of impurity band conduction (IBC) materials, including (1) silicon;gallium epitaxial and bulk material doped at between 1 x 10 the the 17th power and 3 x 10 to the 18th power Ga/cu. cm. (2) silicon;aluminum bulk samples doped at 1 x 10 the the 18th power Al/cu. cm.; and (3) both epitaxial and bulk silicon:arsenic doped at between 2 x 10 to the 17th power and 1 x 10 to the 18th power As/cu. cm. We have measured key electrical parameters of these characterized IBC materials over a wide range of temepratures and electric field conditions and found a sensitive dependence of IBC properties on both major dopant concentration and residual impurity content. After dramatically reducing compensation and shallow residual impurity concentrations, we fabricated and tested silicon:arsenic BIT devices with excellent performance parameters. Responsivities of approx. 10 A/watt and T micrometers sub BLIP of or approx. = 12 K with operating voltages of or approx. = 1 V at Q su b B of 10 to the 10th power ph/sq. cm-sec were observed. The best silicon:arsenic BIT devices were doped with 3 - 6.5 x 10 the 17th power As/cu. cm. and used 15 - 20 micrometers thick detector layers.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1985
- Accession Number
- ADB096313
Entities
People
- M. H. Young
- R. Baron
Organizations
- HRL Laboratories