Charge Transport and Optical Properties in Silicon Quantum Dot Arrays
Abstract
The size dependence of the dielectric function of silicon quantum dots and quantum sheets has been determined using spectroscopic ellipsometry in the photon energy range from 0.73 eV to 4.58eV. The quantum dot/sheet size was varied from greater than 10nm (where the dielectric function is expected to be close to that of bulk silicon) to below 2nm (where theory predicts a decrease due to quantum confinement and/or breaking of polarizable bonds at the dot surface). The ellipsometric measurements were performed at room temperature and correlated with several techniques. A dramatic lowering in the real and imaginary parts of the dielectric function was observed for sized below 3.3 nm. The decrease is much more pronounced than predicted by theory and must be considered when designing optical and electrical devices such as light emitting devices, non-volatile memory devices and singe electron transistors.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 2007
- Accession Number
- ADB329011
Entities
People
- Philippe Fauchet
Organizations
- University of Rochester