An Integrated Electro-Absorptive Light Modulator/Detector.

Abstract

The patent application describes a double heterojunction semiconductor wherein the junction cavity is illuminated by light having a wavelength just below the absorption edge of the semiconductor's active region. By applying a reverse bias to the junction the absorption edge is shifted, and for large values of reverse bias the junction acts as a photo avalanche diode. Light can be modulated or absorbed in the junction and at the same time the semiconductor can act as a detector in registering the event.

Document Details

Document Type
Technical Report
Publication Date
Apr 07, 1975
Accession Number
ADD000670

Entities

People

  • Nicholas Bottka

Organizations

  • United States Department of the Navy

Tags

DTIC Thesaurus Topics

  • Absorption
  • Avalanche Diodes
  • Compound Semiconductors
  • Detectors
  • Diodes
  • Electronics
  • Heterojunctions
  • Modulators
  • Optical Modulators
  • Patent Applications
  • Patents
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics

Readers

  • Electrical Engineering
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Spectroscopy.

Technology Areas

  • Microelectronics