Epitaxial Film Transverse Junction PbSnTe Photodetector.
Abstract
The patent application provides a relatively simple inexpensive junction detector of 8-14 micrometer radiation which is compatible with linear array detector configurations and is constructed from an epitaxial layer of PbSnTe doped with sulfur ions.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 28, 1975
- Accession Number
- ADD001682
Entities
People
- B. B. Houston Jr.
- D. G. Simons
- E. J. Scott
- H. R. Riedl
- R. F. Bis
Organizations
- United States Department of the Navy