Damage Thresholds of P-N Junction Devices by a Current Pulse Method.

Abstract

The patent application provides an improved method for determining the damage threshold of a semiconductor p-n junction. It uses a constant current pulse so that when second breakdown begins the power applied to the device junction is decreased. The power applied up to the point of second breakdown is constant and easily determined from the oscilloscope traces of voltage and current. In addition, the power is clearly more indicative of the power handling capabilities of the device's p-n junction.

Document Details

Document Type
Technical Report
Publication Date
Feb 07, 1975
Accession Number
ADD002045

Entities

People

  • Marcella C. Petree

Organizations

  • United States Department of the Navy

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Electronics
  • Extrinsic Semiconductors
  • Oscilloscopes
  • P-N Junctions
  • Patent Applications
  • Patents
  • Semiconductors
  • Solid State Electronics

Fields of Study

  • Physics

Readers

  • Optical Physics and Photonics.
  • Superconducting Magnet Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics