Trapatt Planar-Mesa Diode.

Abstract

The patent application relates to a TRAPATT diode formed in a planar-mesa configuration with a plane junction. An epitaxial layer of one conductivity type is deposited upon a substrate having an opposite conductivity type and forming a plane junction, with the impurity concentration of the substrate being greater than that of the epitaxial layer. A planar diffusion layer having the same conductivity type as the epitaxial layer but a higher impurity concentration, is embedded in the epitaxial layer and the sides are etched in a mesa configuration.

Document Details

Document Type
Technical Report
Publication Date
Mar 17, 1976
Accession Number
ADD002542

Entities

People

  • Harry Kroger

Organizations

  • United States Department of the Air Force

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Conductivity
  • Diffusion
  • Diodes
  • Impurities
  • Mesa Diodes
  • Patent Applications
  • Patents
  • Substrates
  • Trapatt Diodes

Fields of Study

  • Materials science

Readers

  • Electrical Engineering
  • Semiconductor Device Technology