Double-Layer Oxide Gate Insulators for Field-Effect Transistors.

Abstract

The patent application relates to double-layer oxide gate insulators for field effect transistors that are fabricated using gate insulating layers which are compatible with III-V intermetallic compounds. Specifically, indium phosphide is anodized to form the first layer and silicon dioxide is deposited over the first layer to form the second layer.

Document Details

Document Type
Technical Report
Publication Date
Jul 02, 1976
Accession Number
ADD002891

Entities

People

  • Carl W. Wilmsen
  • Wieder H. Herman

Organizations

  • United States Department of the Navy

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Dielectrics
  • Dioxides
  • Field Effect Transistors
  • Intermetallic Compounds
  • Oxides
  • Patent Applications
  • Patents
  • Silicon
  • Silicon Dioxide
  • Transistors

Fields of Study

  • Materials science

Readers

  • Electrical Engineering
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene