N-Channel Deep Depletion Mode Semiconductor Device.
Abstract
The patent application overcomes problems relating to gate dielectric breakdown and parasitic current flow around device boundaries in N-channel deep depletion mode semiconductors by a device structure that positions the gate window internal to the silicon island and provides P+ diffusion regions between the extremes of the gate window and the island edge. The structure permits the use of a thin deposit of oxide over the gate window and a substantially thicker coating of oxide over the rest of the silicon island and its edges.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 15, 1976
- Accession Number
- ADD002964
Entities
People
- James R. Cricchi
Organizations
- United States Department of the Air Force