Method of Fabrication of Chromium-Silicon Oxide Thin Film Resistors.

Abstract

The patent application relates to a method of fabricating thin film resistors for hybrid microcircuits that eliminates electrical contact problems and provides a means for obtaining high precision by trimming. A thin resistive film is deposited on an insulating substrate over a mask. Without breaking vacuum, a second resistive film which is not subject to oxidation is deposited over the first resistive film. The second resistive film is then etched away from portions which are not used as contact points. Since the second resistive material has a different resistivity, it is also used for low value resistive portions in multiple resistor networks.

Document Details

Document Type
Technical Report
Publication Date
Aug 23, 1976
Accession Number
ADD003268

Entities

People

  • Edward B. Croson

Organizations

  • United States Department of the Navy

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Film Resistors
  • Films
  • Materials
  • Patent Applications
  • Resistors
  • Thin Film Resistors
  • Thin Films

Readers

  • Electrical Engineering
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene