Method for Producing Tailored Etch Rates and Edge Geometries in the Si3N4/Si02 Technology.
Abstract
The patent application concerns a method of controlling the etch rates of chemically deposited SiO2 and Si3N4 by ion implantation damage and/or appropriate impurities. Ion implantation or addition of impurities into glossy materials provide species control, depth control, and disorder control, all of which affect the etch rate. Such control prevents 'shelving' and provides a structure from which one may tailor the etch configuration useful in fabrication of silicon integrated circuits.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 18, 1976
- Accession Number
- ADD003323
Entities
People
- John E. Davey
Organizations
- United States Department of the Navy