Ion-Implanted Barriers for Reducing Alkali Ion Drift in Thin film Insulators.
Abstract
A method of reducing alkali ion drift in surface passivated semiconductor devices by incorporating ion-implanted barriers within the thin-film surface insulators. High doses of ions such as aluminum and neon, implanted within the passivation and field-insulation regions serve as a barrier against deleterious alkali ion drift. Particularly that of the sodium ions. The peak ion concentration should be at least 2000A from the semiconductor/insulator interface and be implanted before the application of subsequent less-clean glassivation layers. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 26, 1977
- Accession Number
- ADD003495
Entities
People
- Harold L. Hughes
Organizations
- United States Department of the Navy