Ion Implanted Eutectic Gallium Arsenide Solar Cell.
Abstract
An improved gallium arsenide solar cell is provided by ion implanting both the top and bottom of a eutectic gallium arsenide cell body to obtain a drift electrical field, with multiple ion implants progressively larger in dose and progressively lower in implant energies to provide a P-type ion implanted top layer having a common connection to all P regions of the cell body and an N-type ion implanted bottom layer having a common connection to all N regions of the cell body. The implanted regions of the cell are pulsed electron beam annealed at room temperature. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 08, 1976
- Accession Number
- ADD003502
Entities
People
- William P. Rahilly
Organizations
- United States Department of the Air Force