Growth of Epitaxial Layers from a Liquid Phase.
Abstract
The invention pertains to a method for preparing a substrate for subsequent liquid-phase epitaxial layer growth whereby the substrate traverses molten solvent metal of the substrate, or an unsaturated solution thereof, in an inert atmosphere at a temperature lying within a range from the melting point of the solvent metal to the melting point of the substrate.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 10, 1977
- Accession Number
- ADD003540
Entities
People
- Edward M. Swiggard
- Howard Lessoff
- Paul E. R. Nordquist
Organizations
- United States Department of the Navy