Investigation of Near-Surface Electronic Properties in Semiconductors by Electron Beam Scanning.
Abstract
This document describes an electron-beam scanning system for investigating the nonuniformity of the work function, the position of the conduction-band edge with respect to the Fermi level, and the electron affinity at the surface of a single-crystal semiconductor. A small-diameter, low-energy electron beam is scanned over the surface to be investigated. The current collected by the surface for electron energies in the retarding-field region is related to the work function of the surface, whereas the current collected by the surface for electron energies in the accelerating-field region is related to the position of the conduction-band edge. The electron affinity is related to the combination of these relationships. Variations in the current collected by the surface for appropriately selected electron energies are used to provide a visual display of variations in these quantities.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 22, 1977
- Accession Number
- ADD004787
Entities
People
- Arnold Shih
- George A. Haas
- Richard E. Thomas
Organizations
- United States Department of the Navy