A Self-Aligned Process for Fabricating Radiation Hard CMOS/SOS Devices.

Abstract

The invention involves a self-aligned process for fabricating radiation hard semiconductor devices and includes the steps of irradiating a substrate with ions to form p-type regions, dividing the substrate into islands and depositing a masking material to form channel areas, growing a thick oxide over the exposed substrate material, removing the masking material, growing a radiation resistant gate oxide in place of the masking material and depositing alumininum metal over the structure after contact openings have been formed in the thick oxide. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jul 20, 1978
Accession Number
ADD005283

Entities

People

  • Steven N. Lee

Organizations

  • United States Department of the Air Force

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Electronics
  • Inventions
  • Materials
  • Radiation
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics
  • Substrates

Readers

  • Nuclear and Radiation Engineering.
  • Semiconductor Device Technology
  • Surface Engineering/Surface Coating Technology.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene