A New Type of Superlattice.
Abstract
A superlattic structure is disclosed in which alternating layers of semiconductor alloy materials provide a one dimensional spatial periodic variation in band edge energy. A first layer of the superlattice device is an alloy including a first Group III material and a first Group V material, preferably In As, while the second layer is an alloy including a second Group III material different from the first Group III material and a second Group V material different from the first Group V material, and preferably GaSb. In the superlattice structure the valence band of the second alloy is closer to the conduction band of the first alloy than it is to the valence band of the first alloy. The invention described herein may be manufactured and used by or for the government for governmental purposes without the payment of any royalties thereon or therefor. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 09, 1978
- Accession Number
- ADD005446
Entities
People
- George Anthony Sai-halasz
- Leo Esaki
- Leroy Ligong Chang
- Raphael Tsu
Organizations
- United States Department of the Army