Injection Laser Structures with a Periodic Active Region.

Abstract

An injection laser structure is disclosed in which the active region comprises a periodic heterojunction structure in which narrow potential barriers produce well defined allowed states in included potential wells (included between the narrow potential barriers) thereby reducing the current threshold for laser action. In the preferred embodiment, the narrow potential barriers are formed from Ga sub 1-x A1 sub x As, and the potential wells are created in GaAs. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 09, 1978
Accession Number
ADD005450

Entities

People

  • Leo Esaki
  • Leroy Ligong Chang

Organizations

  • United States Department of the Army

Tags

DTIC Thesaurus Topics

  • Electronic Equipment
  • Electronics
  • Heterojunctions
  • Semiconductor Devices
  • Semiconductor Junctions

Readers

  • Optical Physics and Photonics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy