Method of Polishing Cadmium Sulfide Semiconductors.

Abstract

A method for polishing semiconductors, particularly surfaces of CdS is described. The method is comprised of polishing a substrate with a pad charged with Transene and Cab-O-Sil while an iodine solution is added in small quantities. The last period of polishing is done while flushing the polishing pad with Transene. Upon completion of polishing, the substrate is given an immediate wash with Transene, followed by ultrasonic cleaning in Transene. After the ultrasonic cleaning, the substrate is again rinsed in Transene and then spun dried. The cleaning process is continuous and the cleaning solutions are kept in active contact with the substrate in order to provide a haze-free product. (Author)

Document Details

Document Type
Technical Report
Publication Date
Oct 05, 1978
Accession Number
ADD005470

Entities

People

  • Anna M. Lackner

Organizations

  • United States Department of the Navy

Tags

Communities of Interest

  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Electronics
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Polishing
  • Semiconductors
  • Silicon Carbide
  • Substrates
  • Ultrasonic Cleaning

Readers

  • Environmental Engineering.
  • Surface Engineering/Surface Coating Technology.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene