Band Interacting Tunnel Heterojunctions.

Abstract

A bilateral tunnel device having a voltage dependent transfer coefficient is disclosed which includes a heterostructure consisting of a first layer of GaSb(1-y)AS(y,) a second layer of In(1-x)Ga(x)As, and a third layer of GaSb(1-7)As(7). The thicknesses of the first and third layers are not critical but the thickness of the second layer must be less than 200 angstroms thick. It is also disclosed that other alloys of Group III and Group V materials can be employed in a tunnel device of the instant invention. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jan 29, 1979
Accession Number
ADD005926

Entities

People

  • G. A. Sai-halasz
  • L. Esaki

Organizations

  • United States Department of the Army

Tags

DTIC Thesaurus Topics

  • Coefficients
  • Electronic Equipment
  • Electronics
  • Heterojunctions
  • Inventions
  • Materials
  • Semiconductor Devices
  • Semiconductor Junctions
  • Solid State Electronics
  • Thickness

Readers

  • Electrical Engineering
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.