Laser Annealing Technique for Improving the Detectivity of Detector Elements in Photovoltaic Detector Arrays.
Abstract
This patent application covers a method of improving the detectivity and other performance characteristics of individual detectors of a fully processed, high-density, photovoltaic detector array. Each detector of a detector array is tested to determine its performance characteristics. If there are some detectors of the array that do not meet the standards required, the nonstandard detectors are annealed at the spot of the defect by use of a laser to correct the situation. The laser pulse is shaped as necessary and is of an intensity that an adjacent detector or other near-by areas are not affected by the laser output. Pulse durations between 10 to the minus 9th power and 1,000,000 sec are acceptable to avoid the spreading of heat. Laser wavelengths much shorter than the cutoff wavelength of the material will concentrate the heating in the region near the surface. The irradiation procedure and sequence must be designed for different photovoltaic detector types and array designs. Once the optimized laser wavelength, power density, pulse durations, and irradiation pattern have been determined for different types of arrays and the different corrective annealing steps (that is, contacts, junction edge, interelement region, etc.) have been determined for specific types of arrays, a large number of arrays of the same type may be treated employing the same optimized parameters. This procedure may also be used for single element detectors as well as for arrays. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 03, 1979
- Accession Number
- ADD006050
Entities
People
- Flibert J. Bartoli
- Leon Esterowtiz
- Roger E. Allen
Organizations
- United States Department of the Navy