Bonded Cathode and Electrode Structure with Layered Insulation and Method of Manufacture.

Abstract

An object of the invention is to improve the longterm resistance stability of the insulating layer between the cathode and the grid (and also the heater) in a bonded grid-cathode tube. Features of the invention relate to the structure and manufacture method in which diffusion barriers of silicon nitride are incorporated in the insulating layer. In particular, with a principal insulator of boron nitride, thin films of silicon nitride are used between it and the cathode, and also between it and the grid. As a further detail feature, an additional thin film of BN is used for stress relief next to the cathode.

Document Details

Document Type
Technical Report
Publication Date
May 09, 1979
Accession Number
ADD006285

Entities

People

  • Casmir R. Trzaskos
  • David W. Oliver

Organizations

  • United States Army

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Ceramic Materials
  • Dielectrics
  • Diffusion
  • Electrodes
  • Films
  • Insulation
  • Inventions
  • Thin Films

Fields of Study

  • Physics

Readers

  • Electronics Engineering
  • Reinforced Composite Materials
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene