Method and Apparatus for the Analysis of Semi-Conductors.
Abstract
Described is a method for obtaining, for analyzation, the current induced in the insulating regions of a MOS semiconductor device, when irradiated by high energy electrons in a scanning electronic microscope; the steps include blanking the electron beam, allowing current in the substrate to dissapate, after a selected delay detecting the desired induced current and analyzing it for any number of desired purposes. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 10, 1979
- Accession Number
- ADD006755
Entities
People
- Wilbur A. Garber
Organizations
- United States Department of the Air Force