Single Crystal Thin Films.
Abstract
A method of developing a layer of single crystal material on the surface of a body such as an insulator, an amorphous or polycrystalline thin film layer of another single crystal and devices created thereby. The single crystal layer that is developed according to the present invention may be formed from an amorphous material or a polycrystalline film. A single crystal seed is placed in juxtaposition to the body and in contact with the amorphous or polycrystalline material to be developed into the single crystal material. a laser or other controlled energy beam is applied to the region of contact between the single crystal seed and the amorphous or polycrystalline material to be converted. Application of the controlled energy beam creates a localized activated region where the film to be converted is in contact with the single crystal seed. The amorphous or polycrystalline film is restructured into single crystal material with its orientation determined by the seed. The beam may then be swept across the entire surface of the amorphous or polycrystalline material to be converted, thereby converting such material in its entirety to single crystal material. Single crystal semiconductor devices formed by the present method are also described. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1979
- Accession Number
- ADD006903
Entities
People
- Monti E. Aklufi
Organizations
- United States Department of the Navy