Normally Off InP Field Effect Transistor.
Abstract
A normally off insulated gate field effect transistor having a p-type single crystal InP substrate with source and drain contacts spaced apart and disposed thereon with a layer of silicon dioxide disposed over the InP material in the space between the contacts and a gate electrode disposed on the silicon dioxide to completely bridge the space between the contacts. The p-type single crystal InP substrate may be replaced by a p-type epitaxial InP material disposed on a semi-insulating InP substrate. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 04, 1979
- Accession Number
- ADD006906
Entities
People
- David A. Collins
- Derek L. Lile
Organizations
- United States Department of the Navy